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2N5088G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5088G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: TO-92
 

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2N5088G datasheet

 ..1. Size:83K  onsemi
2n5088g.pdf pdf_icon

2N5088G

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti... See More ⇒

 8.1. Size:281K  motorola
2n5088 2n5089.pdf pdf_icon

2N5088G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N508 2N508 Unit TO 92 (TO 226AA) 8 9 Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 35 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collec... See More ⇒

 8.2. Size:49K  philips
2n5088 3.pdf pdf_icon

2N5088G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 co... See More ⇒

 8.3. Size:97K  fairchild semi
2n5088 mmbt5088 2n5089 mmbt5089.pdf pdf_icon

2N5088G

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO... See More ⇒

Otros transistores... 2N5013S , 2N5014S , 2N5015SX , 2N5015X , 2N5038G , 2N5052SMD , 2N5087G , 2N5087RLRAG , BC556 , 2N5089G , 2N5151-220M , 2N5151SMD05 , 2N5151U3 , 2N5151XSMD05 , 2N5152A , 2N5152SMD , 2N5152SMD05 .

 

 
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