2N5777 Datasheet. Specs and Replacement

Type Designator: 2N5777  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Collector Capacitance (Cc): 7.6 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO92

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2N5777 datasheet

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2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

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Detailed specifications: 2N5666SMD05, 2N5666U3, 2N5667N1, 2N5667S, 2N5681SMD05, 2N5682X, 2N5684G, 2N5686G, C3198, 2N5778, 2N5779, 2N5780, 2N5781XL, 2N5782L, 2N5784SMD, 2N5784SMD05, 2N5785N1

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