All Transistors. 2N5777 Datasheet

 

2N5777 Datasheet and Replacement


   Type Designator: 2N5777
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Collector Capacitance (Cc): 7.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO92
 

 2N5777 Substitution

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2N5777 Datasheet (PDF)

 ..1. Size:57K  njs
 2n5780 2n5780 2n5777.pdf pdf_icon

2N5777

 ..2. Size:57K  njs
 2n5777.pdf pdf_icon

2N5777

 ..3. Size:64K  advanced-semi
 2n5777.pdf pdf_icon

2N5777

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5777

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

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Datasheet: 2N5666SMD05 , 2N5666U3 , 2N5667N1 , 2N5667S , 2N5681SMD05 , 2N5682X , 2N5684G , 2N5686G , 13005 , 2N5778 , 2N5779 , 2N5780 , 2N5781XL , 2N5782L , 2N5784SMD , 2N5784SMD05 , 2N5785N1 .

Keywords - 2N5777 transistor datasheet

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 2N5777 equivalent finder
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