2N6045G Datasheet. Specs and Replacement

Type Designator: 2N6045G  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220AB

 2N6045G Substitution

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2N6045G datasheet

 ..1. Size:301K  onsemi

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2N6045G

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -... See More ⇒

 ..2. Size:83K  onsemi

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2N6045G

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒

 ..3. Size:83K  onsemi

2n6045g.pdf pdf_icon

2N6045G

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒

 ..4. Size:199K  inchange semiconductor

2n6045g.pdf pdf_icon

2N6045G

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Complement to Type 2N6042 G Pb-Free package Minimum Lot-to-Lot variations for robust device ... See More ⇒

Detailed specifications: 2N6034G, 2N6035G, 2N6036G, 2N6038G, 2N6039G, 2N6040G, 2N6042G, 2N6043G, 2SC828, 2N6052G, 2N6107G, 2N6109G, 2N6111G, 2N6193ALCC4, 2N6193LCC4, 2N6235X, 2N6249T1

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