2N6045G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6045G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de 2N6045G
2N6045G PDF detailed specifications
2n6040g 2n6042g 2n6043g 2n6045g.pdf
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -... See More ⇒
2n6040g 2n6040g 2n6045g.pdf
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒
2n6045g.pdf
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (... See More ⇒
2n6045g.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Complement to Type 2N6042 G Pb-Free package Minimum Lot-to-Lot variations for robust device ... See More ⇒
Otros transistores... 2N6034G , 2N6035G , 2N6036G , 2N6038G , 2N6039G , 2N6040G , 2N6042G , 2N6043G , 2SC828 , 2N6052G , 2N6107G , 2N6109G , 2N6111G , 2N6193ALCC4 , 2N6193LCC4 , 2N6235X , 2N6249T1 .
History: 2SC1308
History: 2SC1308
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