2N6045G Datasheet. Equivalente

 ..1. Size:301K  onsemi
 2n6040g 2n6042g 2n6043g 2n6045g.pdf

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc 60 -

 ..2. Size:83K  onsemi
 2n6040g 2n6040g 2n6045g.pdf

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 ..3. Size:83K  onsemi
 2n6045g.pdf

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 ..4. Size:199K  inchange semiconductor
 2n6045g.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C Complement to Type 2N6042 G Pb-Free package Minimum Lot-to-Lot variations for robust device

 8.1. Size:241K  motorola
 2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf

Order this document MOTOROLA by 2N6040/D SEMICONDUCTOR TECHNICAL DATA PNP Plastic Medium-Power 2N6040 Complementary Silicon Transistors thru . . . designed for general purpose amplifier and low speed switching applications. * 2N6042 High DC Current Gain NPN hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc 2N6043 VCEO(sus

 8.2. Size:73K  inchange semiconductor
 2n6043 2n6044 2n6045.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6043 2N6044 2N6045 DESCRIPTION With TO-220C package Complement to type 2N6040/6041/6042 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;co

 9.1. Size:251K  motorola
 2n6049.pdf

 9.2. Size:83K  onsemi
 2n6042g.pdf

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.3. Size:83K  onsemi
 2n6043g 2n6043g 2n6042g.pdf

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching DARLINGTON, 8 AMPERES applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.4. Size:199K  mospec
 2n6040-45.pdf

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 9.5. Size:130K  inchange semiconductor
 2n6049.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION With TO-66 package Complement to type 2N3054A APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SY