1DI200E-055 Specs and Replacement
Type Designator: 1DI200E-055
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1000 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 70
Package: M207
1DI200E-055 Substitution
- BJT ⓘ Cross-Reference Search
1DI200E-055 datasheet
FUJI POWER TRANSISTOR MODULE 1DI200A-120 (200A) Outline Drawings [mm] POWER TRANSISTOR MODULE POWER TRAN... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 15GN03CA, 15GN03CA-TB-E, 15GN03FA, 15GN03FA-TL-H, 15GN03MA, 15GN03MA-TL-E, 1D500A-030, 1DI200A-120, BD136, 1DI200K-055, 1DI200Z-100, 1DI300D-100, 1DI300Z-120, 1DI30MA-050, 1DI400A-120, 1DI480A-055, 1DI50F-100
Keywords - 1DI200E-055 pdf specs
1DI200E-055 cross reference
1DI200E-055 equivalent finder
1DI200E-055 pdf lookup
1DI200E-055 substitution
1DI200E-055 replacement
