1DI200E-055 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1DI200E-055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1000 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 200 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: M207
1DI200E-055 Transistor Equivalent Substitute - Cross-Reference Search
1DI200E-055 Datasheet (PDF)
8.1. Size:31K fuji
1di200a-120.pdf
1di200a-120.pdf
FUJI POWER TRANSISTOR MODULE1DI200A-120 (200A) :Outline Drawings : : : :[mm]POWER TRANSISTOR MODULEPOWER TRAN
8.3. Size:150K fuji
1di200k-055.pdf
1di200k-055.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
