All Transistors. 1DI200Z-100 Datasheet

 

1DI200Z-100 Datasheet and Replacement


   Type Designator: 1DI200Z-100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1400 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 200 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M106
 

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1DI200Z-100 Datasheet (PDF)

 ..1. Size:97K  fuji
 1di200z-100.pdf pdf_icon

1DI200Z-100

 8.1. Size:31K  fuji
 1di200a-120.pdf pdf_icon

1DI200Z-100

FUJI POWER TRANSISTOR MODULE1DI200A-120 (200A) :Outline Drawings : : : :[mm]POWER TRANSISTOR MODULEPOWER TRAN

 8.2. Size:183K  fuji
 1di200e-055.pdf pdf_icon

1DI200Z-100

 8.3. Size:150K  fuji
 1di200k-055.pdf pdf_icon

1DI200Z-100

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

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Datasheet: 15GN03FA , 15GN03FA-TL-H , 15GN03MA , 15GN03MA-TL-E , 1D500A-030 , 1DI200A-120 , 1DI200E-055 , 1DI200K-055 , 2SD882 , 1DI300D-100 , 1DI300Z-120 , 1DI30MA-050 , 1DI400A-120 , 1DI480A-055 , 1DI50F-100 , 1DI50H-055 , 1DI50K-055 .

Keywords - 1DI200Z-100 transistor datasheet

 1DI200Z-100 cross reference
 1DI200Z-100 equivalent finder
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