All Transistors. 1DI50F-100 Datasheet

 

1DI50F-100 Datasheet and Replacement


   Type Designator: 1DI50F-100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M204
 

 1DI50F-100 Substitution

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1DI50F-100 Datasheet (PDF)

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1DI50F-100

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1DI50F-100

FUJI POWER TRANSISTOR MODULE1DI50MA-050 (50A)POWER TRANSISTOR MODULEPOWER TRANSISTOR MODULEPOWER TRANSISTOR MODULEPOWER TRANSISTOR MODULEPOWER TRANSISTOR MODULE

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1DI50F-100

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1DI50F-100

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 1DI50F-100 transistor datasheet

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