1DI50F-100 Specs and Replacement
Type Designator: 1DI50F-100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 400 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M204
1DI50F-100 Substitution
- BJT ⓘ Cross-Reference Search
1DI50F-100 datasheet
"1DI50F-100" "1DI50F-100" "1DI50F-100" "1DI50F-100" ... See More ⇒
FUJI POWER TRANSISTOR MODULE 1DI50MA-050 (50A) POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE ... See More ⇒
Detailed specifications: 1DI200E-055, 1DI200K-055, 1DI200Z-100, 1DI300D-100, 1DI300Z-120, 1DI30MA-050, 1DI400A-120, 1DI480A-055, BC547, 1DI50H-055, 1DI50K-055, 1DI50MA-050, 1DI75E-055, 1DI75E-100, 1DI75F-055, 1DI75F-100, 1SC1383
Keywords - 1DI50F-100 pdf specs
1DI50F-100 cross reference
1DI50F-100 equivalent finder
1DI50F-100 pdf lookup
1DI50F-100 substitution
1DI50F-100 replacement




