1DI50F-100 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 1DI50F-100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 400 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M204

1DI50F-100 Transistor Equivalent Substitute - Cross-Reference Search

1DI50F-100 Datasheet (PDF)

..1. Size:189K fuji
1di50f-100.pdf

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9.1. Size:32K fuji
1di50ma-050.pdf

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9.2. Size:177K fuji
1di50h-055.pdf