1DI75E-100 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1DI75E-100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: M206
1DI75E-100 Transistor Equivalent Substitute - Cross-Reference Search
1DI75E-100 Datasheet (PDF)
7.1. Size:144K fuji
1di75e-055.pdf
1di75e-055.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
9.1. Size:123K fuji
1di75f-100.pdf
1di75f-100.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .