1DI75E-100 Datasheet. Specs and Replacement
Type Designator: 1DI75E-100 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 500 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 1000 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 75 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: M206
📄📄 Copy
1DI75E-100 Substitution
- BJT ⓘ Cross-Reference Search
1DI75E-100 datasheet
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 1DI30MA-050, 1DI400A-120, 1DI480A-055, 1DI50F-100, 1DI50H-055, 1DI50K-055, 1DI50MA-050, 1DI75E-055, 2N2222, 1DI75F-055, 1DI75F-100, 1SC1383, 30A02CH-TL-E, 30A02MH-TL-E, 30A02MH-TL-H, 30C02CH-TL-E, 30C02MH-TL-E
Keywords - 1DI75E-100 pdf specs
1DI75E-100 cross reference
1DI75E-100 equivalent finder
1DI75E-100 pdf lookup
1DI75E-100 substitution
1DI75E-100 replacement
BJT Parameters and How They Relate
🌐 : EN ES РУ
LIST
Last Update
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
Popular searches
a933 transistor | d209l | irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent




