All Transistors. 1DI75E-100 Datasheet

 

1DI75E-100 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 1DI75E-100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 500 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 75 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: M206

 1DI75E-100 Transistor Equivalent Substitute - Cross-Reference Search

   

1DI75E-100 Datasheet (PDF)

 ..1. Size:192K  fuji
1di75e-100.pdf

1DI75E-100 1DI75E-100

 7.1. Size:144K  fuji
1di75e-055.pdf

1DI75E-100 1DI75E-100

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.1. Size:123K  fuji
1di75f-100.pdf

1DI75E-100 1DI75E-100

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.2. Size:179K  fuji
1di75f-055.pdf

1DI75E-100 1DI75E-100

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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