30A02MH-TL-H Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

30A02MH-TL-H Datasheet. Specs and Replacement

Type Designator: 30A02MH-TL-H

SMD Transistor Code: AL

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 520 MHz

Collector Capacitance (Cc): 4.7 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT323

30A02MH-TL-H Substitution

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30A02MH-TL-H datasheet

7.1. Size:47K sanyo

30a02mh.pdf pdf_icon

Ordering number ENN7359 30A02MH PNP Epitaxial Planar Silicon Transistor 30A02MH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, high-speed switching, unit mm small motor drive. 2194A [30A02MH] 0.3 Features 0.15 Large current capacitance. 3 Low collector-to-emitter saturation voltage (resistance). RC... See More ⇒

7.2. Size:371K onsemi

30a02mh.pdf pdf_icon

Ordering number EN7359A 30A02MH Bipolar Transistor http //onsemi.com ( ) 30V, 0.7A, Low VCE sat PNP Single MCPH3 Applications Low-frequency Amplifier, high-speed switching small motor drive Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580m [IC=0.7A, IB=35mA] Small ON-resistance (Ron) Specificatio... See More ⇒

7.3. Size:273K onsemi

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