4N1815PGP Datasheet, Equivalent, Cross Reference Search
Type Designator: 4N1815PGP
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO251S
4N1815PGP Transistor Equivalent Substitute - Cross-Reference Search
4N1815PGP Datasheet (PDF)
4n1815pgp.pdf
CHENMKO ENTERPRISE CO.,LTD4N1815PGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 100 Volts CURRENT 3 AmperesAPPLICATION* High current amplifier.FEATURE* Small flat package. ( TO-251S )TO-251S* Low Collector-to-Emitter Saturation Voltage.264(6.70).094(2.40).256(6.50).215(5.46) .023(0.58).087(2.20)CONSTRUCTION .018(0.46).201(5.10)* NPN Cilicon Transistor.244(6.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .