4N1815PGP Datasheet. Specs and Replacement

Type Designator: 4N1815PGP

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO251S

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4N1815PGP datasheet

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4N1815PGP

CHENMKO ENTERPRISE CO.,LTD 4N1815PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 100 Volts CURRENT 3 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. ( TO-251S ) TO-251S * Low Collector-to-Emitter Saturation Voltage .264(6.70) .094(2.40) .256(6.50) .215(5.46) .023(0.58) .087(2.20) CONSTRUCTION .018(0.46) .201(5.10) * NPN Cilicon Transistor .244(6.... See More ⇒

Detailed specifications: 1DI75F-100, 1SC1383, 30A02CH-TL-E, 30A02MH-TL-E, 30A02MH-TL-H, 30C02CH-TL-E, 30C02MH-TL-E, 30C02MH-TL-H, S8050, 4N772GP, 4SCG110, 4SCG120K, 4SCG160, 4SCG5714, 4SDG110, 4SDG110K, 50A02CH-TL-E

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