All Transistors. 4SCG160 Datasheet

 

4SCG160 Datasheet and Replacement


   Type Designator: 4SCG160
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: DIP14A
      - BJT Cross-Reference Search

   

4SCG160 Datasheet (PDF)

 ..1. Size:241K  china
 4scg160.pdf pdf_icon

4SCG160

4SCG160 PNP A B C PCM Ta=25 3004 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 V V(BR) EBO IEB=0.1mA 6.0 V ICBO VCB=50V 0.1 A ICEO VCE=50V 1.0 A IEBO VEB=2V 1.

 9.1. Size:240K  china
 4scg110.pdf pdf_icon

4SCG160

4SCG110 PNP A B C PCM Ta=25 3004 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=2V 0.1 A

 9.2. Size:243K  china
 4scg120k.pdf pdf_icon

4SCG160

4SCG120K PNP A B C PCM Ta=25 5004 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.5

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CTP1732 | BD507-1 | 2SC3489 | DTA114TMFHA | RT2P01M | CP502 | GBD190

Keywords - 4SCG160 transistor datasheet

 4SCG160 cross reference
 4SCG160 equivalent finder
 4SCG160 lookup
 4SCG160 substitution
 4SCG160 replacement

 

 
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