All Transistors. 4SCG160 Datasheet

 

4SCG160 Datasheet and Replacement


   Type Designator: 4SCG160
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: DIP14A
 

 4SCG160 Substitution

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4SCG160 Datasheet (PDF)

 ..1. Size:241K  china
 4scg160.pdf pdf_icon

4SCG160

4SCG160 PNP A B C PCM Ta=25 3004 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 120 160 200 V V(BR)CEO ICE=0.1mA 100 140 180 V V(BR) EBO IEB=0.1mA 6.0 V ICBO VCB=50V 0.1 A ICEO VCE=50V 1.0 A IEBO VEB=2V 1.

 9.1. Size:240K  china
 4scg110.pdf pdf_icon

4SCG160

4SCG110 PNP A B C PCM Ta=25 3004 mW ICM 50 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=2V 0.1 A

 9.2. Size:243K  china
 4scg120k.pdf pdf_icon

4SCG160

4SCG120K PNP A B C PCM Ta=25 5004 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.5

Datasheet: 30A02MH-TL-H , 30C02CH-TL-E , 30C02MH-TL-E , 30C02MH-TL-H , 4N1815PGP , 4N772GP , 4SCG110 , 4SCG120K , 2N3906 , 4SCG5714 , 4SDG110 , 4SDG110K , 50A02CH-TL-E , 50A02CH-TL-H , 50A02MH-TL-E , 50A02SS-TL-E , 50C02CH-TL-E .

History: 2SD366 | 2SB737 | 2SC4690R | 2N1233 | KRC104M | KSB744AY | 2SB750A

Keywords - 4SCG160 transistor datasheet

 4SCG160 cross reference
 4SCG160 equivalent finder
 4SCG160 lookup
 4SCG160 substitution
 4SCG160 replacement

 

 
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