All Transistors. BFT46DCSM Datasheet

 

BFT46DCSM Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFT46DCSM
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 0.5 A
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: LCC2

 BFT46DCSM Transistor Equivalent Substitute - Cross-Reference Search

   

BFT46DCSM Datasheet (PDF)

 ..1. Size:10K  semelab
bft46dcsm.pdf

BFT46DCSM

BFT46DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 250V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0

 9.1. Size:47K  philips
bft46 cnv 2.pdf

BFT46DCSM
BFT46DCSM

DISCRETE SEMICONDUCTORSDATA SHEETBFT46N-channel silicon FETDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel siliconepitaxial planar junction field-effecttransistor in a microminiature plasticenvelope. The transistor is intendedfor low leve

 9.2. Size:209K  philips
bft46 cnv.pdf

BFT46DCSM
BFT46DCSM

DISCRETE SEMICONDUCTORS DATA SHEETBFT46N-channel silicon FETProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3handbook, halfpage

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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