BFT46DCSM Specs and Replacement
Type Designator: BFT46DCSM
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 0.5 A
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: LCC2
BFT46DCSM Substitution
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BFT46DCSM datasheet
BFT46DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 250V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low leve... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage... See More ⇒
Detailed specifications: BFT32A, BFT33A, BFT33B, BFT33L, BFT34A, BFT36A, BFT36L, BFT44S, A733, BFT57CSM, BFT57DCSM, BFT58CSM, BFT58DCSM, BFT59CSM, BFT59DCSM, BT2222, BT2222A
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History: 2SC3666Y
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