BFT46DCSM Datasheet and Replacement
Type Designator: BFT46DCSM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 0.5 A
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: LCC2
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BFT46DCSM Datasheet (PDF)
bft46dcsm.pdf

BFT46DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 250V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0
bft46 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFT46N-channel silicon FETDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel siliconepitaxial planar junction field-effecttransistor in a microminiature plasticenvelope. The transistor is intendedfor low leve
bft46 cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBFT46N-channel silicon FETProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon FET BFT46DESCRIPTIONSymmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3handbook, halfpage
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: RT1N237U | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3
Keywords - BFT46DCSM transistor datasheet
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History: RT1N237U | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3



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