BFT46DCSM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFT46DCSM  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-emisor (Vce): 250 V

Corriente del colector DC máxima (Ic): 0.5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 60 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: LCC2

  📄📄 Copiar 

 Búsqueda de reemplazo de BFT46DCSM

- Selecciónⓘ de transistores por parámetros

 

BFT46DCSM datasheet

 ..1. Size:10K  semelab
 bft46dcsm.pdf pdf_icon

BFT46DCSM

BFT46DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 250V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0

 9.1. Size:47K  philips
 bft46 cnv 2.pdf pdf_icon

BFT46DCSM

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low leve

 9.2. Size:209K  philips
 bft46 cnv.pdf pdf_icon

BFT46DCSM

DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose 3 handbook, halfpage

Otros transistores... BFT32A, BFT33A, BFT33B, BFT33L, BFT34A, BFT36A, BFT36L, BFT44S, TIP42C, BFT57CSM, BFT57DCSM, BFT58CSM, BFT58DCSM, BFT59CSM, BFT59DCSM, BT2222, BT2222A