BTB7150N3 Specs and Replacement

Type Designator: BTB7150N3

SMD Transistor Code: AN

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

 BTB7150N3 Substitution

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BTB7150N3 datasheet

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BTB7150N3

Spec. No. C661N3 Issued Date 2009.11.11 CYStech Electronics Corp. Revised Date Page No. 1/6 High Current PNP Digital Transistors (Built-in Resistors) BTB7150N3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors ... See More ⇒

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BTB7150N3

Spec. No. C240N3 CYStech Electronics Corp. Issued Date 2013.02.19 Revised Date Page No. 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB718N3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTB718N3 B Base C Col... See More ⇒

Detailed specifications: BT2222A, BT3904, BTA1012E3, BTA1015A3, BTA2039J3, BTB1184J3S, BTB1236AL3, BTB1426A3, 2SD313, BTB772SA3, BTC2328AK3, BTC4621K3, BTD1805D3, C2611, C3150, C3875S, C5344

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