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CHUMT1GP PDF Specs and Replacement


   Type Designator: CHUMT1GP
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-363
 

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CHUMT1GP PDF detailed specifications

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CHUMT1GP

CHENMKO ENTERPRISE CO.,LTD CHUMT1GP SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SC-88/SOT-363) SC-88/SOT-363 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current ca... See More ⇒

Detailed specifications: CH847UPNGP , CH848BGP , CH857SGP , CH858BGP , CH867UNPGP , CH867UPNGP , CH882GP , CHBTA13GP , C5198 , CHUMX1GP , CHUMY1GP , CHUMZ1GP , CJ10P20DE6 , CJ201NL , CJ303NL , CJ303PL , CJ818B .

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