CHUMT1GP Datasheet, Equivalent, Cross Reference Search
Type Designator: CHUMT1GP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-363
CHUMT1GP Transistor Equivalent Substitute - Cross-Reference Search
CHUMT1GP Datasheet (PDF)
..1. Size:174K chenmko
chumt1gp.pdf
chumt1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMT1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SC-88/SOT-363)SC-88/SOT-363* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current ca
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
