All Transistors. CHUMT1GP Datasheet

 

CHUMT1GP Datasheet and Replacement


   Type Designator: CHUMT1GP
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-363
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CHUMT1GP Datasheet (PDF)

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CHUMT1GP

CHENMKO ENTERPRISE CO.,LTDCHUMT1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SC-88/SOT-363)SC-88/SOT-363* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current ca

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2N4026

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