All Transistors. CHUMT1GP Datasheet

 

CHUMT1GP Datasheet and Replacement


   Type Designator: CHUMT1GP
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-363
 

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CHUMT1GP Datasheet (PDF)

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CHUMT1GP

CHENMKO ENTERPRISE CO.,LTDCHUMT1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SC-88/SOT-363)SC-88/SOT-363* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current ca

Datasheet: CH847UPNGP , CH848BGP , CH857SGP , CH858BGP , CH867UNPGP , CH867UPNGP , CH882GP , CHBTA13GP , 13007 , CHUMX1GP , CHUMY1GP , CHUMZ1GP , CJ10P20DE6 , CJ201NL , CJ303NL , CJ303PL , CJ818B .

History: 2SC224

Keywords - CHUMT1GP transistor datasheet

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