CJ818B Specs and Replacement
Type Designator: CJ818B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23-6L
CJ818B Substitution
- BJT ⓘ Cross-Reference Search
CJ818B datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ818B TRANSISTOR (PNP) DESCRIPTIONS The device is manfactured in low voltage PNP Planar T echnology with SOT-23-6L Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. FEATURE Very low collector to emit... See More ⇒
Detailed specifications: CHUMT1GP, CHUMX1GP, CHUMY1GP, CHUMZ1GP, CJ10P20DE6, CJ201NL, CJ303NL, CJ303PL, TIP3055, CJL818C, CJP718, CM4209, CM45-12A, CM4957, CM5160, CM5583, CM5943
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