All Transistors. CJ818B Datasheet

 

CJ818B Datasheet and Replacement


   Type Designator: CJ818B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23-6L
 

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CJ818B Datasheet (PDF)

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CJ818B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ818B TRANSISTOR (PNP) DESCRIPTIONS The device is manfactured in low voltage PNP Planar T echnology with SOT-23-6L Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. FEATURE Very low collector to emit

Datasheet: CHUMT1GP , CHUMX1GP , CHUMY1GP , CHUMZ1GP , CJ10P20DE6 , CJ201NL , CJ303NL , CJ303PL , 13009 , CJL818C , CJP718 , CM4209 , CM45-12A , CM4957 , CM5160 , CM5583 , CM5943 .

History: BF871A | 2SC1661

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