CJP718 Specs and Replacement
Type Designator: CJP718
SMD Transistor Code: 718
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: DFNWB2*2-3L
CJP718 Substitution
- BJT ⓘ Cross-Reference Search
CJP718 datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-3L Plastic-Encapsulate Transistors CJP718 TRANSISTOR (PNP) DFNWB2*2-3L FEATURE Low Equivalent On Resistance 2 Low Staturation Voltage 3 1 APPLICATIONS DC-DC Converters (FET Driving) Charging Circuits Power Switches Motor Control MARKING COLLECTOR 3 1 BASE front back 2 EMITTER Tape Drawin... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD T0-220-3L Plastic-Encapsulate MOSFETS CJP71N90 N-Channel MOSFET TO-220-3L DESCRIPTION The CJP71N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. 1. GATE FEATURES 2. DRAIN 3. SOURCE Lead free product is ... See More ⇒
Detailed specifications: CHUMY1GP, CHUMZ1GP, CJ10P20DE6, CJ201NL, CJ303NL, CJ303PL, CJ818B, CJL818C, BC557, CM4209, CM45-12A, CM4957, CM5160, CM5583, CM5943, CMBT3904E, CMBT3906E
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