CMLT6427E Datasheet, Equivalent, Cross Reference Search
Type Designator: CMLT6427E
SMD Transistor Code: C64
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 15000
Noise Figure, dB: -
Package: SOT-563
CMLT6427E Transistor Equivalent Substitute - Cross-Reference Search
CMLT6427E Datasheet (PDF)
..1. Size:461K central
cmlt6427e.pdf
cmlt6427e.pdf
CMLT6427Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNT SILICONDESCRIPTION:NPN DARLINGTON TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification silicon NPN Darlington transistor. High DC current gains, coupled with a low saturation voltage, make this an excellent choice for industrial/consumer applications where operational efficiency and small
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
