All Transistors. CMLT8099M Datasheet

 

CMLT8099M Datasheet and Replacement


   Type Designator: CMLT8099M
   SMD Transistor Code: 8CM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-563
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CMLT8099M Datasheet (PDF)

 ..1. Size:616K  central
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CMLT8099M

CMLT8099Mwww.centralsemi.comSURFACE MOUNT SILICONDUAL, MATCHEDDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE(ON) characteristics. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.MARKING CODE: 8CMSOT-563 CASE

 6.1. Size:520K  central
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CMLT8099M

CMLT8099www.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose amplifier applications.MARKING C

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: D11C1053 | UN621K | KRA567U | ZTX300 | CHDTA115TEGP | BD544D | MPS-U57

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