All Transistors. D3DD9D Datasheet

 

D3DD9D Datasheet and Replacement


   Type Designator: D3DD9D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: TO-3
 

 D3DD9D Substitution

   - BJT ⓘ Cross-Reference Search

   

D3DD9D Datasheet (PDF)

 ..1. Size:23K  shaanxi
 d3dd9d.pdf pdf_icon

D3DD9D

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9DNPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

Datasheet: CMXT3904 , CMXT3906 , CMXT3946 , CMXT7090L , D1815-R , D1816 , D29D30 , D304X , S9014 , D44H11G , D44H8G , D44VH10G , D45H11G , D45H1B , D45H8G , D45VH10G , D471A .

Keywords - D3DD9D transistor datasheet

 D3DD9D cross reference
 D3DD9D equivalent finder
 D3DD9D lookup
 D3DD9D substitution
 D3DD9D replacement

 

 
Back to Top

 


 
.