D3DD9D Specs and Replacement

Type Designator: D3DD9D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: TO-3

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D3DD9D datasheet

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D3DD9D

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China D3DD9D NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a... See More ⇒

Detailed specifications: CMXT3904, CMXT3906, CMXT3946, CMXT7090L, D1815-R, D1816, D29D30, D304X, 2SC2073, D44H11G, D44H8G, D44VH10G, D45H11G, D45H1B, D45H8G, D45VH10G, D471A

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