D882M Datasheet and Replacement
Type Designator: D882M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-252-2L
D882M Substitution
D882M Datasheet (PDF)
d882m.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 .EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Colle
Datasheet: D44VH10G , D45H11G , D45H1B , D45H8G , D45VH10G , D471A , D596 , D882H , BC546 , D965ASS , D965-R , D965SS , D965-T , D965V , DBC846BPDW1T1G , DBC847BPDW1T1G , DBC847CPDW1T1G .
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