D882M Datasheet and Replacement
Type Designator: D882M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-252-2L
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D882M Datasheet (PDF)
d882m.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 .EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Colle
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC945-Y | H2N3906 | 2SA940T1TL | 2N5552-2 | 3DA96B
Keywords - D882M transistor datasheet
D882M cross reference
D882M equivalent finder
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History: 2SC945-Y | H2N3906 | 2SA940T1TL | 2N5552-2 | 3DA96B



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