D965SS Datasheet, Equivalent, Cross Reference Search
Type Designator: D965SS
SMD Transistor Code: D65
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 230
Noise Figure, dB: -
Package: SOT-23
D965SS Transistor Equivalent Substitute - Cross-Reference Search
D965SS Datasheet (PDF)
d965ss.pdf
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UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
fd965s.pdf
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FD965S TRANSISTOR (NPN)FEATURES Low Collector-Emitter Saturation Voltage SOT-23 Large Collector Power Dissipation and Current 32 Mini Power Type Package 11. BASE : 9652.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base V
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