All Transistors. D965SS Datasheet

 

D965SS Datasheet and Replacement


   Type Designator: D965SS
   SMD Transistor Code: D65
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 230
   Noise Figure, dB: -
   Package: SOT-23
 

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D965SS Datasheet (PDF)

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D965SS

UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P

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D965SS

FD965S TRANSISTOR (NPN)FEATURES Low Collector-Emitter Saturation Voltage SOT-23 Large Collector Power Dissipation and Current 32 Mini Power Type Package 11. BASE : 9652.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base V

Datasheet: D45H8G , D45VH10G , D471A , D596 , D882H , D882M , D965ASS , D965-R , BD135 , D965-T , D965V , DBC846BPDW1T1G , DBC847BPDW1T1G , DBC847CPDW1T1G , DBC848BPDW1T1G , DBC848CPDW1T1G , DBMT9015 .

Keywords - D965SS transistor datasheet

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