All Transistors. DBC847BPDW1T1G Datasheet

 

DBC847BPDW1T1G Datasheet and Replacement


   Type Designator: DBC847BPDW1T1G
   SMD Transistor Code: 3F
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-363
 

 DBC847BPDW1T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

DBC847BPDW1T1G Datasheet (PDF)

 ..1. Size:500K  dxc
 dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf pdf_icon

DBC847BPDW1T1G

Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit

Datasheet: D882H , D882M , D965ASS , D965-R , D965SS , D965-T , D965V , DBC846BPDW1T1G , 2SC945 , DBC847CPDW1T1G , DBC848BPDW1T1G , DBC848CPDW1T1G , DBMT9015 , DC0150ADJ , DC0150BDJ , DC8050 , DC9018 .

Keywords - DBC847BPDW1T1G transistor datasheet

 DBC847BPDW1T1G cross reference
 DBC847BPDW1T1G equivalent finder
 DBC847BPDW1T1G lookup
 DBC847BPDW1T1G substitution
 DBC847BPDW1T1G replacement

 

 
Back to Top

 


 
.