DBC848CPDW1T1G Datasheet. Specs and Replacement

Type Designator: DBC848CPDW1T1G  📄📄 

SMD Transistor Code: 13L

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: SOT-363

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DBC848CPDW1T1G datasheet

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DBC848CPDW1T1G

Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit... See More ⇒

Detailed specifications: D965-R, D965SS, D965-T, D965V, DBC846BPDW1T1G, DBC847BPDW1T1G, DBC847CPDW1T1G, DBC848BPDW1T1G, 2SC2625, DBMT9015, DC0150ADJ, DC0150BDJ, DC8050, DC9018, DCP55-16-13, CHIMX1GP, CHIMX2GP

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