DC8050 Datasheet. Specs and Replacement
Type Designator: DC8050 ππ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-92
DC8050 Substitution
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DC8050 datasheet
DC COMPONENTS CO., LTD. DC8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist... See More ⇒
Detailed specifications: DBC846BPDW1T1G, DBC847BPDW1T1G, DBC847CPDW1T1G, DBC848BPDW1T1G, DBC848CPDW1T1G, DBMT9015, DC0150ADJ, DC0150BDJ, TIP42, DC9018, DCP55-16-13, CHIMX1GP, CHIMX2GP, CHIMX3GP, CHP69GP, CHRT5993PT, CHRT5993TGP
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History: AC153-7 | MPQ6076 | KSC2715Y
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