All Transistors. DK100 Datasheet

 

DK100 Datasheet and Replacement


   Type Designator: DK100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-3
 

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DK100 Datasheet (PDF)

 ..1. Size:25K  shaanxi
 dk100.pdf pdf_icon

DK100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK100NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards: GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switc

 0.1. Size:182K  china
 3dk100.pdf pdf_icon

DK100

3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs

Datasheet: CHTA42XGP , CHTA42ZGP , CHTA44ZGP , CHTA64ZGP , CHTA92LGP , CHTA92XGP , CHTA92ZGP , DK10 , D965 , DK101 , DK11 , DK150 , DK151 , DK200 , DK201 , DK30 , DK300 .

Keywords - DK100 transistor datasheet

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