DK100 Datasheet. Specs and Replacement

Type Designator: DK100  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-3

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DK100 datasheet

 ..1. Size:25K  shaanxi

 dk100.pdf pdf_icon

DK100

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK100 NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. Good voltage resistance. 3. Implementation of standards GJB33A -97, QZJ840611A, QZJ840611 4. Use for high power switc... See More ⇒

 0.1. Size:182K  china

 3dk100.pdf pdf_icon

DK100

3DK100 NPN A B C PCM TC=25 100 mW ICM 30 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 20 15 V V(BR)CEO ICE=0.1mA 15 15 10 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=6V 0.1 A ICEO VCE=6V 0.1 A IEBO VEB=1.5V 0.1 A VBEs... See More ⇒

Detailed specifications: CHTA42XGP, CHTA42ZGP, CHTA44ZGP, CHTA64ZGP, CHTA92LGP, CHTA92XGP, CHTA92ZGP, DK10, NJW0281G, DK101, DK11, DK150, DK151, DK200, DK201, DK30, DK300

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