DK11 Datasheet. Specs and Replacement
Type Designator: DK11 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.01 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.002 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-3
DK11 Substitution
- BJT ⓘ Cross-Reference Search
DK11 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China DK11, DK31, NPN Silicon High Power Switching Transistor Features 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards GJB33 -85, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching... See More ⇒
3DK11 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55 150 RthJC 1.17 /W V(BR)CBO ICB=3mA 250 V V(BR)CEO ICE=3mA 200 V V(BR)EBO IEB=3mA 7.0 V ICEO VCE=160V 1.5 mA IEBO VEB=5V 1.0 mA VBEsat 1.5 IC=12A V IB=1.5A VCEsat 1.0 ... See More ⇒
Detailed specifications: CHTA44ZGP, CHTA64ZGP, CHTA92LGP, CHTA92XGP, CHTA92ZGP, DK10, DK100, DK101, 2SD669A, DK150, DK151, DK200, DK201, DK30, DK300, DK301, DK31
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