All Transistors. DK11 Datasheet

 

DK11 Datasheet and Replacement


   Type Designator: DK11
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.01 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.002 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-3
 

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DK11 Datasheet (PDF)

 ..1. Size:31K  shaanxi
 dk11.pdf pdf_icon

DK11

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China DK11, DK31, NPN Silicon High Power Switching Transistor Features: 1. Good switching character. Excellent capacity in anti-burnout. 2. Good temperature stability. Small saturation voltage drop. 3. Implementation of standards: GJB33 -85, QZJ840611A, QZJ840611 4. Use for high power switch circuit,switching

 0.1. Size:118K  china
 3dk11.pdf pdf_icon

DK11

3DK11 NPN PCM TC=25 150 W ICM 25 A Tjm 175 Tstg -55~150 RthJC 1.17 /W V(BR)CBO ICB=3mA 250 V V(BR)CEO ICE=3mA 200 V V(BR)EBO IEB=3mA 7.0 V ICEO VCE=160V 1.5 mA IEBO VEB=5V 1.0 mA VBEsat 1.5 IC=12A V IB=1.5A VCEsat 1.0

Datasheet: CHTA44ZGP , CHTA64ZGP , CHTA92LGP , CHTA92XGP , CHTA92ZGP , DK10 , DK100 , DK101 , TIP2955 , DK150 , DK151 , DK200 , DK201 , DK30 , DK300 , DK301 , DK31 .

Keywords - DK11 transistor datasheet

 DK11 cross reference
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