FMBS2383 Datasheet. Specs and Replacement

Type Designator: FMBS2383

SMD Transistor Code: 2383

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.63 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SSOT-6

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FMBS2383 datasheet

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FMBS2383

April 2011 FMBS2383 NPN Epitaxial Silicon Transistor Features Power Amplifier Collector-Emitter Voltage VCEO=160V Current Gain Bandwidth Product fT=120MHz E 1 6 C C 2 5 B C C 3 4 SuperSOTTM-6 Marking 2383 Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage ... See More ⇒

Detailed specifications: DSCF001, DSCQ001, DSS4160DS, DSS4160T, DSS5160T, DT430, L2SA1235FLT1G, L2SA1577PT1G, 2N2907, FMBT5401LG, GCA1943T, GMA6801, GMC6802, KSR16, KSR16-HF, KSS1C200LT1G, KST50

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