All Transistors. FMBS2383 Datasheet

 

FMBS2383 Datasheet and Replacement


   Type Designator: FMBS2383
   SMD Transistor Code: 2383
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.63 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SSOT-6
 

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FMBS2383 Datasheet (PDF)

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FMBS2383

April 2011FMBS2383NPN Epitaxial Silicon TransistorFeatures Power Amplifier Collector-Emitter Voltage : VCEO=160V Current Gain Bandwidth Product : fT=120MHzE1 6CC2 5BCC3 4SuperSOTTM-6Marking : 2383Absolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage

Datasheet: DSCF001 , DSCQ001 , DSS4160DS , DSS4160T , DSS5160T , DT430 , L2SA1235FLT1G , L2SA1577PT1G , 2SC2482 , FMBT5401LG , GCA1943T , GMA6801 , GMC6802 , KSR16 , KSR16-HF , KSS1C200LT1G , KST50 .

History: ACY22E | AM1011-300 | 3DG2736

Keywords - FMBS2383 transistor datasheet

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