All Transistors. FMBS2383 Datasheet

 

FMBS2383 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FMBS2383
   SMD Transistor Code: 2383
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.63 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SSOT-6

 FMBS2383 Transistor Equivalent Substitute - Cross-Reference Search

   

FMBS2383 Datasheet (PDF)

 ..1. Size:250K  fairchild semi
 fmbs2383.pdf

FMBS2383 FMBS2383

April 2011FMBS2383NPN Epitaxial Silicon TransistorFeatures Power Amplifier Collector-Emitter Voltage : VCEO=160V Current Gain Bandwidth Product : fT=120MHzE1 6CC2 5BCC3 4SuperSOTTM-6Marking : 2383Absolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6015

 

 
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