All Transistors. F8050HQLG Datasheet

 

F8050HQLG Datasheet and Replacement


   Type Designator: F8050HQLG
   SMD Transistor Code: 1HC
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
 

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F8050HQLG Datasheet (PDF)

 ..1. Size:465K  first silicon
 f8050hqlg.pdf pdf_icon

F8050HQLG

F8050HQLGPlastic-Encapsulate TransistorsSimplified outlineF8050HQLG TRANSISTOR NPN SOT-23Features Power dissipation PCM : 0.3 WTamb=25 1. BASE Collector current2. EMITTER ICM : 1.5 A 3. COLLECTOR Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJTstg: -55 to +150 Device Mark

 8.1. Size:412K  first silicon
 f8050hplg.pdf pdf_icon

F8050HQLG

F8050HPLGPlastic-Encapsulate TransistorsSimplified outlineF8050HPLG TRANSISTOR NPN SOT-23Features Complimentary to F8550HQLG Collector Current: IC=0.5A 1. BASE 2. EMITTER Marking: 1HA3. COLLECTOR Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

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