F8050HQLG Specs and Replacement
Type Designator: F8050HQLG
SMD Transistor Code: 1HC
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-23
F8050HQLG Substitution
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F8050HQLG datasheet
F8050HQLG Plastic-Encapsulate Transistors Simplified outline F8050HQLG TRANSISTOR NPN SOT-23 Features Power dissipation PCM 0.3 W Tamb=25 1. BASE Collector current 2. EMITTER ICM 1.5 A 3. COLLECTOR Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Device Mark... See More ⇒
F8050HPLG Plastic-Encapsulate Transistors Simplified outline F8050HPLG TRANSISTOR NPN SOT-23 Features Complimentary to F8550HQLG Collector Current IC=0.5A 1. BASE 2. EMITTER Marking 1HA 3. COLLECTOR Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-... See More ⇒
Detailed specifications: EMZ51, EMZ52, EMZ7, ETF81-050, ETG81-050A, ETL81-050, ETN35-030, F8050HPLG, 2N3906, FMB2907A, EMT52, EMX18, EMX1DXV6T1G, EMX1DXV6T5G, EMX1FHA, CHEMF17GP, CHEMF18GP
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History: 2SD1049
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