DMBT8550 Datasheet and Replacement
Type Designator: DMBT8550
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-23
DMBT8550 Substitution
DMBT8550 Datasheet (PDF)
dmbt8550.pdf

DC COMPONENTS CO., LTD.DMBT8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2.045(1.15)Absolute Maximum Ratings(TA=25oC).034(0.85).091(2.30)
dmbt8050.pdf

DC COMPONENTS CO., LTD.DMBT8050DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(2.80)3 = Collector.047(1.20) .083(2.10)1 2.045(1.20)Absolute Maximum Ratings(TA=25oC).034(0.90).091(2.30).0
Datasheet: DMBT2907A , DMBT3904 , DMBT3906 , DMBT4401 , DMBT4403 , DMBT5401 , DMBT5551 , DMBT8050 , TIP32C , DMBT9012 , DMBT9013 , DMBT9014 , DMBT9018 , DMBTA42 , DMBTA44 , DMC20101 , DMC201A0 .
History: HE3055 | BD372B-16 | BD937F | CSC1008R | 2SD621 | BLY87A
Keywords - DMBT8550 transistor datasheet
DMBT8550 cross reference
DMBT8550 equivalent finder
DMBT8550 lookup
DMBT8550 substitution
DMBT8550 replacement
History: HE3055 | BD372B-16 | BD937F | CSC1008R | 2SD621 | BLY87A



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