All Transistors. DMBT8550 Datasheet

 

DMBT8550 Datasheet and Replacement


   Type Designator: DMBT8550
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
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DMBT8550 Datasheet (PDF)

 ..1. Size:77K  dc components
 dmbt8550.pdf pdf_icon

DMBT8550

DC COMPONENTS CO., LTD.DMBT8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2.045(1.15)Absolute Maximum Ratings(TA=25oC).034(0.85).091(2.30)

 9.1. Size:823K  dc components
 dmbt8050.pdf pdf_icon

DMBT8550

DC COMPONENTS CO., LTD.DMBT8050DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(2.80)3 = Collector.047(1.20) .083(2.10)1 2.045(1.20)Absolute Maximum Ratings(TA=25oC).034(0.90).091(2.30).0

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA325 | DTC144ETA | 2SC498 | 2N6490 | DTL1642 | CSC4115B | 3DD5G

Keywords - DMBT8550 transistor datasheet

 DMBT8550 cross reference
 DMBT8550 equivalent finder
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