L2SD1781KQLT1G Datasheet. Specs and Replacement
Type Designator: L2SD1781KQLT1G 📄📄
SMD Transistor Code: AFQ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-23
L2SD1781KQLT1G Substitution
- BJT ⓘ Cross-Reference Search
L2SD1781KQLT1G datasheet
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme... See More ⇒
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem... See More ⇒
Detailed specifications: L2SC3837QLT1G, L2SC3837T1G, L2SC3838QLT1G, L2SC4226T1G, L2SC5343QLT1G, L2SC5343RLT1G, L2SC5343SLT1G, L2SC5635LT1G, S9013, L8050HSLT1G, L8550HSLT1G, L9012, L9013, L9014, LBC807-16DMT1G, LBC807-25DMT1G, LBC807-40DMT1G
Keywords - L2SD1781KQLT1G pdf specs
L2SD1781KQLT1G cross reference
L2SD1781KQLT1G equivalent finder
L2SD1781KQLT1G pdf lookup
L2SD1781KQLT1G substitution
L2SD1781KQLT1G replacement
