All Transistors. L2SD1781KQLT1G Datasheet

 

L2SD1781KQLT1G Datasheet and Replacement


   Type Designator: L2SD1781KQLT1G
   SMD Transistor Code: AFQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-23
 

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L2SD1781KQLT1G Datasheet (PDF)

 ..1. Size:118K  lrc
 l2sd1781kqlt1g.pdf pdf_icon

L2SD1781KQLT1G

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme

 5.1. Size:117K  lrc
 l2sd1781krlt1g.pdf pdf_icon

L2SD1781KQLT1G

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem

Datasheet: L2SC3837QLT1G , L2SC3837T1G , L2SC3838QLT1G , L2SC4226T1G , L2SC5343QLT1G , L2SC5343RLT1G , L2SC5343SLT1G , L2SC5635LT1G , 2SB817 , L8050HSLT1G , L8550HSLT1G , L9012 , L9013 , L9014 , LBC807-16DMT1G , LBC807-25DMT1G , LBC807-40DMT1G .

History: 2SC382 | 2SC4163M | 2SC2956 | CHDTC123YEGP | 849CT | CHIMD8GP | BC332

Keywords - L2SD1781KQLT1G transistor datasheet

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