L2SD1781KQLT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: L2SD1781KQLT1G
SMD Transistor Code: AFQ
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-23
L2SD1781KQLT1G Transistor Equivalent Substitute - Cross-Reference Search
L2SD1781KQLT1G Datasheet (PDF)
l2sd1781kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme
l2sd1781krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
