LBCW65ALT1G Specs and Replacement
Type Designator: LBCW65ALT1G
SMD Transistor Code: EA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT-23
LBCW65ALT1G Substitution
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LBCW65ALT1G datasheet
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCW65ALT1G Featrues S-LBCW65ALT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emit... See More ⇒
Detailed specifications: LBC817-16DPMT1G, LBC817-25DMT1G, LBC817-40DMT1G, LBC817-40DPMT1G, LBC846ADW1T1G, LBC847CPDW1T1G, LBC848AWT1G, LBC858CWT1G, 2SC2383, M54522WP, M54530FP, M54530P, M54531FP, M54531P, M54531WP, M54532FP, M54532P
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