LBCW65ALT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBCW65ALT1G
SMD Transistor Code: EA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: SOT-23
LBCW65ALT1G Transistor Equivalent Substitute - Cross-Reference Search
LBCW65ALT1G Datasheet (PDF)
1.1. lbcw65alt1g.pdf 
Size:69K _upd
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCW65ALT1G Featrues S-LBCW65ALT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emit
Datasheet: LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G , LBC858CWT1G , BC550 , M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP , M54532FP , M54532P .
