All Transistors. LBCW65ALT1G Datasheet

 

LBCW65ALT1G Datasheet and Replacement


   Type Designator: LBCW65ALT1G
   SMD Transistor Code: EA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT-23
 

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LBCW65ALT1G Datasheet (PDF)

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LBCW65ALT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit

Datasheet: LBC817-16DPMT1G , LBC817-25DMT1G , LBC817-40DMT1G , LBC817-40DPMT1G , LBC846ADW1T1G , LBC847CPDW1T1G , LBC848AWT1G , LBC858CWT1G , 2SC828 , M54522WP , M54530FP , M54530P , M54531FP , M54531P , M54531WP , M54532FP , M54532P .

History: 2SC1077 | DTC143TUB | 2SC2411-R | 2SC1329 | KRC402 | 2SC2411KFRA | RCA32

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