RT3A66M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3A66M
SMD Transistor Code: AHE
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.8 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT-363
RT3A66M Transistor Equivalent Substitute - Cross-Reference Search
RT3A66M Datasheet (PDF)
..1. Size:149K isahaya
rt3a66m.pdf
rt3a66m.pdf
PRELIMINARY PRELIMINARY RT3A66M NoticeThis is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify ApplicationSilicon Pnp Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application. 2.1 FEATURE 1.25 High Vce
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
