All Transistors. RT3A66M Datasheet

 

RT3A66M Datasheet and Replacement


   Type Designator: RT3A66M
   SMD Transistor Code: AHE
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 2.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SOT-363
 

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RT3A66M Datasheet (PDF)

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RT3A66M

PRELIMINARY PRELIMINARY RT3A66M NoticeThis is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify ApplicationSilicon Pnp Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application. 2.1 FEATURE 1.25 High Vce

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA919 | 2SA929H | RT3WLMM

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