RT3A66M Specs and Replacement
Type Designator: RT3A66M
SMD Transistor Code: AHE
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.8 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SOT-363
RT3A66M Substitution
- BJT ⓘ Cross-Reference Search
RT3A66M datasheet
PRELIMINARY PRELIMINARY RT3A66M Notice This is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application. 2.1 FEATURE 1.25 High Vce... See More ⇒
Detailed specifications: MAG9413, MBT2222ADW1T1G, MBT35200MT1G, MBT3904DW1T3G, MBT3906DW1T2G, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, BC337, RT3A77M, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH
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