All Transistors. RT3C66M Datasheet

 

RT3C66M Datasheet and Replacement


   Type Designator: RT3C66M
   SMD Transistor Code: CJE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 72
   Noise Figure, dB: -
   Package: SOT-363
 

 RT3C66M Substitution

   - BJT ⓘ Cross-Reference Search

   

RT3C66M Datasheet (PDF)

 ..1. Size:141K  isahaya
 rt3c66m.pdf pdf_icon

RT3C66M

PRELIMINARY PRELIMINARY RT3C66M NoticeThis is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify ApplicationSilicon Npn Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application. 2.1 1.25 FEATURE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Keywords - RT3C66M transistor datasheet

 RT3C66M cross reference
 RT3C66M equivalent finder
 RT3C66M lookup
 RT3C66M substitution
 RT3C66M replacement

 

 
Back to Top

 


 
.