All Transistors. RT3C66M Datasheet

 

RT3C66M Datasheet and Replacement


   Type Designator: RT3C66M
   SMD Transistor Code: CJE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 72
   Noise Figure, dB: -
   Package: SOT-363
 

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RT3C66M Datasheet (PDF)

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RT3C66M

PRELIMINARY PRELIMINARY RT3C66M NoticeThis is not a final specification Some parametric are subject to change. Dual Transistor For Differential Amplify ApplicationSilicon Npn Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application. 2.1 1.25 FEATURE

Datasheet: MBT35200MT1G , MBT3904DW1T3G , MBT3906DW1T2G , MBT3946DW1T2G , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , BC337 , RT3C77M , RT3CLLM , RT3CRRM , RT3CXXM , PBSM5240PF , PBSM5240PFH , PBSS2540MB , PBSS3515MB .

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