RT3C66M Specs and Replacement

Type Designator: RT3C66M

SMD Transistor Code: CJE

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 72

Noise Figure, dB: -

Package: SOT-363

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RT3C66M datasheet

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RT3C66M

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Detailed specifications: MBT35200MT1G, MBT3904DW1T3G, MBT3906DW1T2G, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, 2SA1943, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH, PBSS2540MB, PBSS3515MB

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