All Transistors. RT3C77M Datasheet

 

RT3C77M Datasheet and Replacement


   Type Designator: RT3C77M
   SMD Transistor Code: C77
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363
 

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RT3C77M Datasheet (PDF)

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RT3C77M

PRELIMINARY PRELIMINARY RT3C77M NoticeThis is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3C77M is compound transistor built with two 2.1 1.25 2SC6046 chips in SC-88 package. FEATURE High collector

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NB021HZ

Keywords - RT3C77M transistor datasheet

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