RT3C77M Specs and Replacement
Type Designator: RT3C77M
SMD Transistor Code: C77
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363
RT3C77M Substitution
- BJT ⓘ Cross-Reference Search
RT3C77M datasheet
PRELIMINARY PRELIMINARY RT3C77M Notice This is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3C77M is compound transistor built with two 2.1 1.25 2SC6046 chips in SC-88 package. FEATURE High collector... See More ⇒
Detailed specifications: MBT3904DW1T3G, MBT3906DW1T2G, MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, TIP122, RT3CLLM, RT3CRRM, RT3CXXM, PBSM5240PF, PBSM5240PFH, PBSS2540MB, PBSS3515MB, PBSS3540MB
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