All Transistors. RT3CRRM Datasheet

 

RT3CRRM Datasheet and Replacement


   Type Designator: RT3CRRM
   SMD Transistor Code: CRR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SOT-363
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RT3CRRM Datasheet (PDF)

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RT3CRRM

RT3CRRM Composite Transistor For Muting ApplicationSilicon Npn Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3CRRM is compound transistor built with two INC2001A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=40mV(TYP.)@IC=50mA/IB=2.5mA Low on Resistanc

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