RT3CRRM Specs and Replacement
Type Designator: RT3CRRM
SMD Transistor Code: CRR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 820
Package: SOT-363
RT3CRRM Substitution
- BJT ⓘ Cross-Reference Search
RT3CRRM datasheet
RT3CRRM Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3CRRM is compound transistor built with two INC2001A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=40mV(TYP.) @IC=50mA/IB=2.5mA Low on Resistanc... See More ⇒
Detailed specifications: MBT3946DW1T2G, MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM, 13007, RT3CXXM, PBSM5240PF, PBSM5240PFH, PBSS2540MB, PBSS3515MB, PBSS3540MB, PBSS4021NX, PBSS4021NZ
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