All Transistors. RT3CXXM Datasheet

 

RT3CXXM Datasheet and Replacement


   Type Designator: RT3CXXM
   SMD Transistor Code: CXX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SOT-363
 

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RT3CXXM Datasheet (PDF)

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RT3CXXM

RT3CXXM Composite Transistor For Muting ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3CXXM is compound transistor built with two INC2002A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse h FESmall collector to emitter saturation voltage. V =40mV (@I =50mA/I =2.5mA) CE(sat) (TYP.) C BLow on Re

Datasheet: MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M , RT3C77M , RT3CLLM , RT3CRRM , 2SD718 , PBSM5240PF , PBSM5240PFH , PBSS2540MB , PBSS3515MB , PBSS3540MB , PBSS4021NX , PBSS4021NZ , PBSS4021PX .

History: TUL1102

Keywords - RT3CXXM transistor datasheet

 RT3CXXM cross reference
 RT3CXXM equivalent finder
 RT3CXXM lookup
 RT3CXXM substitution
 RT3CXXM replacement

 

 
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