RT3CXXM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3CXXM
SMD Transistor Code: CXX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SOT-363
RT3CXXM Transistor Equivalent Substitute - Cross-Reference Search
RT3CXXM Datasheet (PDF)
rt3cxxm.pdf
RT3CXXM Composite Transistor For Muting ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3CXXM is compound transistor built with two INC2002A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse h FESmall collector to emitter saturation voltage. V =40mV (@I =50mA/I =2.5mA) CE(sat) (TYP.) C BLow on Re
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2918 | KTC3205-O | CV12253L | RT697M | 3DG2736 | 3DG183
History: 2N2918 | KTC3205-O | CV12253L | RT697M | 3DG2736 | 3DG183
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050