RT3CXXM Datasheet and Replacement
Type Designator: RT3CXXM
SMD Transistor Code: CXX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SOT-363
RT3CXXM Substitution
RT3CXXM Datasheet (PDF)
rt3cxxm.pdf

RT3CXXM Composite Transistor For Muting ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3CXXM is compound transistor built with two INC2002A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse h FESmall collector to emitter saturation voltage. V =40mV (@I =50mA/I =2.5mA) CE(sat) (TYP.) C BLow on Re
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA1169 | 2SA916 | RT2P04M | RT2P27M | 2SA874M
Keywords - RT3CXXM transistor datasheet
RT3CXXM cross reference
RT3CXXM equivalent finder
RT3CXXM lookup
RT3CXXM substitution
RT3CXXM replacement
History: 2SA1169 | 2SA916 | RT2P04M | RT2P27M | 2SA874M



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