RT3CXXM Specs and Replacement
Type Designator: RT3CXXM
SMD Transistor Code: CXX
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 50 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 820
Package: SOT-363
RT3CXXM Substitution
- BJT ⓘ Cross-Reference Search
RT3CXXM datasheet
RT3CXXM Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3CXXM is compound transistor built with two INC2002A chips in SC-88 package. FEATURE Small package for easy mounting. High reverse h FE Small collector to emitter saturation voltage. V =40mV (@I =50mA/I =2.5mA) CE(sat) (TYP.) C B Low on Re... See More ⇒
Detailed specifications: MBT6517LT1, MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, BD140, PBSM5240PF, PBSM5240PFH, PBSS2540MB, PBSS3515MB, PBSS3540MB, PBSS4021NX, PBSS4021NZ, PBSS4021PX
Keywords - RT3CXXM pdf specs
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