All Transistors. PBSM5240PF Datasheet

 

PBSM5240PF Datasheet and Replacement


   Type Designator: PBSM5240PF
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT-1118
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PBSM5240PF Datasheet (PDF)

 ..1. Size:372K  nxp
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PBSM5240PF

PBSM5240PF40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETRev. 2 20 April 2011 Product data sheet1. Product profile1.1 General descriptionCombination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.1.2 Fea

 0.1. Size:855K  nxp
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PBSM5240PF

PBSM5240PFH40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionCombination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BF422S | MS1261 | 2SD69 | BD434 | BD651 | CSB1086N | 2SD77

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