PBSM5240PF Specs and Replacement

Type Designator: PBSM5240PF

SMD Transistor Code: 1G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SOT-1118

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PBSM5240PF datasheet

 ..1. Size:372K  nxp

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PBSM5240PF

PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Fea... See More ⇒

 0.1. Size:855K  nxp

 pbsm5240pfh.pdf pdf_icon

PBSM5240PF

PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6... See More ⇒

Detailed specifications: MBTA06LT1, RT3A66M, RT3A77M, RT3C66M, RT3C77M, RT3CLLM, RT3CRRM, RT3CXXM, TIP3055, PBSM5240PFH, PBSS2540MB, PBSS3515MB, PBSS3540MB, PBSS4021NX, PBSS4021NZ, PBSS4021PX, PBSS4021PZ

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