PBSM5240PF Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSM5240PF
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT-1118
PBSM5240PF Transistor Equivalent Substitute - Cross-Reference Search
PBSM5240PF Datasheet (PDF)
pbsm5240pf.pdf
PBSM5240PF40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETRev. 2 20 April 2011 Product data sheet1. Product profile1.1 General descriptionCombination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.1.2 Fea
pbsm5240pfh.pdf
PBSM5240PFH40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionCombination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: XC155
