MG6330-R Datasheet. Specs and Replacement
Type Designator: MG6330-R 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-3P
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MG6330-R datasheet
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R TO-3P Plastic Package Complimentary PNP MG9410 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) MG6330 MG6330-R VCBO Collector Base Voltage 230V 260V VCEO Colle... See More ⇒
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R TO-3P Plastic Package Complimentary PNP MG9411 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) MG6331 MG6331-R VCBO Col... See More ⇒
Detailed specifications: MD708B, MD918A, MD918AF, MD918AFHXV, MD918B, MD918BF, MD918HX, MG6330, 2N4401, MG6331, MG6331-R, MG9410, MG9410-R, MG9411, MG9411-R, MHQ2369AHXV, MHQ2369HX
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