MG6330-R Datasheet and Replacement
Type Designator: MG6330-R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-3P
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MG6330-R Datasheet (PDF)
mg6330-r.pdf

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R TO-3P Plastic Package Complimentary PNP MG9410 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6330 MG6330-R VCBO Collector Base Voltage 230V 260V VCEO Colle
mg6331-r.pdf

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R TO-3P Plastic Package Complimentary PNP MG9411 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6331 MG6331-R VCBO Col
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | LBC817-40DPMT3G | SGSF321
Keywords - MG6330-R transistor datasheet
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History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | LBC817-40DPMT3G | SGSF321



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