MG6331-R Datasheet, Equivalent, Cross Reference Search
Type Designator: MG6331-R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 250 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-3P
MG6331-R Transistor Equivalent Substitute - Cross-Reference Search
MG6331-R Datasheet (PDF)
mg6331-r.pdf
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R TO-3P Plastic Package Complimentary PNP MG9411 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6331 MG6331-R VCBO Col
mg6330-r.pdf
SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R TO-3P Plastic Package Complimentary PNP MG9410 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6330 MG6330-R VCBO Collector Base Voltage 230V 260V VCEO Colle
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
