All Transistors. MG6331-R Datasheet

 

MG6331-R Datasheet and Replacement


   Type Designator: MG6331-R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 260 V
   Maximum Collector-Emitter Voltage |Vce|: 260 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 18 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO-3P
      - BJT Cross-Reference Search

   

MG6331-R Datasheet (PDF)

 ..1. Size:582K  semelab
 mg6331-r.pdf pdf_icon

MG6331-R

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R TO-3P Plastic Package Complimentary PNP MG9411 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6331 MG6331-R VCBO Col

 9.1. Size:579K  semelab
 mg6330-r.pdf pdf_icon

MG6331-R

SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R TO-3P Plastic Package Complimentary PNP MG9410 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG6330 MG6330-R VCBO Collector Base Voltage 230V 260V VCEO Colle

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: CSD2495

Keywords - MG6331-R transistor datasheet

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