MG9411-R Datasheet and Replacement
Type Designator: MG9411-R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-3P
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MG9411-R Datasheet (PDF)
mg9411-r.pdf

SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9411 MG9411-R VCBO Col
mg9410-r.pdf

SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R TO-3P Plastic Package Complimentary NPN MG6330 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9410 MG9410-R VCBO Collector Base Voltage -230V -260V VCEO Col
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD1246 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | BCV61A | CMLT4413
Keywords - MG9411-R transistor datasheet
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History: 2SD1246 | 2SC1353 | DTD114E | UNR221L | ZX5T853G | BCV61A | CMLT4413



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