MG9411-R Datasheet. Specs and Replacement
Type Designator: MG9411-R 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-3P
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MG9411-R datasheet
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) MG9411 MG9411-R VCBO Col... See More ⇒
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R TO-3P Plastic Package Complimentary NPN MG6330 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) MG9410 MG9410-R VCBO Collector Base Voltage -230V -260V VCEO Col... See More ⇒
Detailed specifications: MD918HX, MG6330, MG6330-R, MG6331, MG6331-R, MG9410, MG9410-R, MG9411, TIP2955, MHQ2369AHXV, MHQ2369HX, MHQ2484HX, MHQ3251AHX, MHQ3468HX, MHQ6002HX, MHQ918HX, US6T8
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