MG9411-R Datasheet, Equivalent, Cross Reference Search
Type Designator: MG9411-R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 260 V
Maximum Collector-Emitter Voltage |Vce|: 260 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 18 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO-3P
MG9411-R Transistor Equivalent Substitute - Cross-Reference Search
MG9411-R Datasheet (PDF)
mg9411-r.pdf
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R TO-3P Plastic Package Complimentary NPN MG6331 Designed specifically for audio power amplifier applications Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9411 MG9411-R VCBO Col
mg9410-r.pdf
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R TO-3P Plastic Package Complimentary NPN MG6330 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) MG9410 MG9410-R VCBO Collector Base Voltage -230V -260V VCEO Col
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1294O | 2SC1907 | HA1962 | NTE2560 | 2SA1306 | 2SA1386B-A | 2N5827A
History: 2SA1294O | 2SC1907 | HA1962 | NTE2560 | 2SA1306 | 2SA1386B-A | 2N5827A
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BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D