VT6T1 Datasheet, Equivalent, Cross Reference Search
Type Designator: VT6T1
SMD Transistor Code: T1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: VMT6
VT6T1 Transistor Equivalent Substitute - Cross-Reference Search
VT6T1 Datasheet (PDF)
vt6t1.pdf
VT6T1 / EMT51DatasheetGeneral purpose transister (isolated dual transistors)lOutlinelParameter Tr1 and Tr2 VMT6 EMT6VCEO-20VIC-200mA VT6T1 EMT51(SC-107C) lFeatures lInner circuitl l1) General Purpose.2) Two 2SAR522 chips in one package.3) Transiste
vt6t11.pdf
Power management (dual transistors) VT6T11 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
vt6t12.pdf
Power management (dual transistors) VT6T12 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Abbreviated symbol : T12Current mirr
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
