All Transistors. WBD13003D Datasheet

 

WBD13003D Datasheet, Equivalent, Cross Reference Search


   Type Designator: WBD13003D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-252

 WBD13003D Transistor Equivalent Substitute - Cross-Reference Search

   

WBD13003D Datasheet (PDF)

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 wbd13003d.pdf

WBD13003D WBD13003D

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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