All Transistors. WBD13003D Datasheet

 

WBD13003D Datasheet and Replacement


   Type Designator: WBD13003D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-252
 

 WBD13003D Substitution

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WBD13003D Datasheet (PDF)

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WBD13003D

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

Datasheet: VT6T12 , VT6T2 , VT6X1 , VT6X11 , VT6X12 , VT6X2 , VT6Z1 , VT6Z2 , 2SC5200 , WBN13002 , WBN13002LD , WBN13003A1 , WBN13003B , WBN13003B2D , WBP13003D , WBP13005D , WBP13005D1 .

History: BC231B

Keywords - WBD13003D transistor datasheet

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