WBD13003D Specs and Replacement
Type Designator: WBD13003D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 21 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-252
WBD13003D Substitution
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WBD13003D datasheet
WBD13003D WBD13003D WBD13003D WBD13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such... See More ⇒
Detailed specifications: VT6T12, VT6T2, VT6X1, VT6X11, VT6X12, VT6X2, VT6Z1, VT6Z2, BD222, WBN13002, WBN13002LD, WBN13003A1, WBN13003B, WBN13003B2D, WBP13003D, WBP13005D, WBP13005D1
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