US5L9 Datasheet, Equivalent, Cross Reference Search
Type Designator: US5L9
SMD Transistor Code: L09
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 270
Noise Figure, dB: -
Package: TUMT5
US5L9 Transistor Equivalent Substitute - Cross-Reference Search
US5L9 Datasheet (PDF)
..1. Size:65K rohm
us5l9.pdf
us5l9.pdf
US5L9 Transistors General purpose transistor (isolated transistor and diode) US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver 2.01.3 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package ROHM : TUMT5 Abbreviated symbol : L09 Structure Silicon epitaxial planar tr
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N642
