FG531 Datasheet, Equivalent, Cross Reference Search
Type Designator: FG531
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1000 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-18
FG531 Transistor Equivalent Substitute - Cross-Reference Search
FG531 Datasheet (PDF)
..1. Size:109K china
fg531.pdf
fg531.pdf
3DG531(FG531) NPN A B C D PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 30 40 50 V V(BR)CEO ICE=1mA 25 35 40 V V(BR)EBO IEB=1mA 3.0 4.0 V ICEO VCE=20V 0.5 mA IC=100mA VCEsat 0.5 V IB=10mA VCE=10V hFE 20 IC=5
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KSA1013
