FG531 Datasheet. Specs and Replacement

Type Designator: FG531  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1000 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO-18

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FG531 datasheet

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FG531

3DG531(FG531) NPN A B C D PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 40 50 V V(BR)CEO ICE=1mA 25 35 40 V V(BR)EBO IEB=1mA 3.0 4.0 V ICEO VCE=20V 0.5 mA IC=100mA VCEsat 0.5 V IB=10mA VCE=10V hFE 20 IC=5... See More ⇒

Detailed specifications: UMZ2NFHA, US5L10, US5L12, US5L9, FCX493A, FD75C, FF8550HQLG, FFB2907A, BC558, FH205, FH206, FH306, FH309, FH317, FH6298, FH681, FHC050

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