All Transistors. FHD050 Datasheet

 

FHD050 Datasheet and Replacement


   Type Designator: FHD050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-3
 

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FHD050 Datasheet (PDF)

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FHD050

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD050NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

Datasheet: FHC150 , FHC30 , FHC50 , FHC6287 , FHC70 , FHD010 , FHD020 , FHD030 , 2SC2383Y , FHD075 , FHD100 , FHD11032 , FHD122 , FHD128B , FHD150 , FHD228G , FHD30 .

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