FHD30 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD30
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO-3
FHD30 Transistor Equivalent Substitute - Cross-Reference Search
FHD30 Datasheet (PDF)
..1. Size:146K china
fhd30.pdf
fhd30.pdf
FHD30 NPN B C D E F G PCM Tc=25 30 W ICM 5 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V ICBO VCB=20V 1.0 mA ICEO VCE=20V 1.0 mA VBEsat 2.0 V IC=
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FMA3A
