FHD4035 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD4035
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-3
FHD4035 Transistor Equivalent Substitute - Cross-Reference Search
FHD4035 Datasheet (PDF)
..1. Size:109K china
fhd4035.pdf
fhd4035.pdf
FHD4035(MJ4035) NPN Ptot Tc=25 150 W ICM 16 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=100mA 100 V V(BR) CEO ICB=100mA 100 V V(BR)EBO ICE=5mA 5.0 V ICEO VCB=50V 3.0 mA IEBO VCE=50V 5.0 mA IC=10A VCEsat 2.5 V IB=0.1A VCE=3V hFE 1000 IC=10A 1.
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
