FHD8766 Datasheet, Equivalent, Cross Reference Search
Type Designator: FHD8766
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-3
FHD8766 Transistor Equivalent Substitute - Cross-Reference Search
FHD8766 Datasheet (PDF)
..1. Size:135K china
fhd8766.pdf
fhd8766.pdf
FHD8766(RCA8766) NPN 87668766A 8766B 8766D8766C 8766E PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR) CBO ICB=2mA 350 400 450 V V(BR) CEO ICE=2mA 350 400 450 V V(BR)EBO IEB=2mA 5.0 V ICEO VCE=V(BR)CEO 1.0 V IEBO VEB=5V 60 mA 876
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .