DMG90401 Datasheet. Specs and Replacement
Type Designator: DMG90401 📄📄
SMD Transistor Code: A9
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Package: SOT-563
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DMG90401 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DMG90401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification DMG50401 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B ... See More ⇒
Detailed specifications: DMC904F1, DME20101, DME20102, DME20501, DME20B01, DME20C01, DMG21401, DMG50401, 2SC5200, DMMT2907A, DMMT3904, DMR935E1, DMS935E1, DMS935E2, DTA114WCA, EMF23, EMF24
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