DMG90401 Datasheet, Equivalent, Cross Reference Search
Type Designator: DMG90401
SMD Transistor Code: A9
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: SOT-563
DMG90401 Transistor Equivalent Substitute - Cross-Reference Search
DMG90401 Datasheet (PDF)
dmg90401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG90401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplificationDMG50401 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .